Home Legal Notice Privacy Policy Contact


Silicon-Germanium (SiGe) technology is perfectly suited to the demands of high frequency RF mixed-signal applications. SiGe ICs could be manufactured at high integration level, lower up to middle volumes and low costs. SiGe is a semiconductor technology which is capable for realization of key RF building blocks like LNAs, mixers, oscillators and especially for complete monolithic integration of receivers and transmitters. In some aspects like high-frequency noise or low power consumption SiGe hetero bipolar transistors (HBTs) are advantageous over III/V-HBTs.

SiGe became a driving force in emerging markets of low-cost, lightweight, personal communication devices, high speed data transmission, radar applications, Direct Broadcast Satellite (DBS) and automobile collision avoidance systems. SiGe devices are just on an upswing due to their compatibility with existing silicon technologies. The main technology partner of Silicon Radar is IHP with its world-class SiGe BiCMOS technlogies. Detailed information on foundry services and manufacturing schedules can be found on the IHP WWW pages.

The following table lists the main parameters of the technologies used by Silicon Radar:

SG25H1 A high-performance technology with npn-HBTs up to fT/fmax= 180/220 GHz.
SG25H2 A complementary high-performance technology with npn-HBTs similar to SG25H1 and additional pnp-HBTs with fT/fmax= 85/120 GHz.
SG25H3 A technology with a set of npn-HBTs, ranging from a high RF performance (fT/fmax= 110 GHz/190 GHz) to high breakdown voltages up to 7 V.
SGB25VD A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V. A distinctive feature of this technology is additional integrated complementary RF LDMOS devices with breakdown voltages of up to 26 V.

Further information about SiGe:

IHP Technology
Introduction to Silicon-Germanium (SiGe) technology

Contact |Legal Notice |Privacy Policy |Terms and conditions |© Silicon Radar 2016